Monday - October 26, 2026

Dual-Gate Semiconductor Structures for Power Applications

2026-09-29

ALEXANDRIA, Virginia, Sept. 29 -- QORVO US, INC., Greensboro, North Carolina has been assigned a patent (No. US 12751034 B2, initially filed Dec. 29, 2023) developed by three inventors Elias Reese, Dallas, Texas; Amin Shahverdi, Murphy, Texas; and Nikolaus Klemmer, Dallas, Texas, for "Dual-gate semiconductor structures for power applications." . . .

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Dual-Gate Semiconductor Structures for Power Applications

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