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Semiconductor Die Having a Drift Region With a Charge Compensation Region Formed Therein Where the Charge Compensation Region Has a Plurality of Guard Rings Formed in a First and a Second Opposite Doping Type Portions

2026-09-01

ALEXANDRIA, Virginia, Sept. 1 -- WOLFSPEED, INC., Durham, North Carolina has been assigned a patent (No. US 12727194 B2, initially filed March 2, 2020) developed by four inventors Philipp Steinmann, Durham, North Carolina; Edward Robert Van Brunt, Raleigh, North Carolina; Sei-Hyung Ryu, Cary, North Carolina; and Jae-Hyung Park, Apex, North Carolina, for "Semiconductor die having a drift region with a charge compensation region formed therein where the charge compensation region has a plurality . . .

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Semiconductor Die Having a Drift Region With a Charge Compensation Region Formed Therein Where the Charge Compensation Region Has a Plurality of Guard Rings Formed in a First and a Second Opposite Doping Type Portions

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