Wednesday - September 2, 2026

Field Effect Transistor (FET) Transconductance Device With Varying Gate Lengths

2026-08-25

ALEXANDRIA, Virginia, Aug. 25 -- QORVO US, INC., Greensboro, North Carolina has been assigned a patent (No. US 12719426 B2, initially filed Dec. 29, 2021) developed by Kevin Wesley Kobayashi, Redondo Beach, California, for "Field effect transistor (FET) transconductance device with varying gate lengths." . . .

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Field Effect Transistor (FET) Transconductance Device With Varying Gate Lengths

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