Thursday - August 20, 2026

AP-pinned Data Storage Layer and Laminated Topological Heusler Alloy SOT-MRAM Unit Cell for in-Memory Computing Artificial Intelligence Inference Chip

2026-08-18

ALEXANDRIA, Virginia, Aug. 18 -- Two inventors, Kuok San Ho, Mountain Ranch, California, and Ming Jiang, San Jose, California, have been awarded a patent (No. US 12712004 B2, initially filed April 11, 2024) for "AP-pinned data storage layer and laminated topological heusler alloy SOT-MRAM unit cell for in-memory computing artificial intelligence inference chip." . . .

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AP-pinned Data Storage Layer and Laminated Topological Heusler Alloy SOT-MRAM Unit Cell for in-Memory Computing Artificial Intelligence Inference Chip

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