Wednesday - September 2, 2026

Enhancement-Mode GaN HFET Including ScAIN and Method of Manufacturing the Same

2026-07-28

ALEXANDRIA, Virginia, July 28 -- QORVO US, INC., Greensboro, North Carolina has been assigned a patent (No. US 12696510 B2, initially filed Aug. 5, 2021) developed by Jinqiao Xie, Allen, Texas, and Edward A. Beam, III, Plano, Texas, for "Enhancement-mode GaN HFET including ScAIN and method of manufacturing the same." . . .

Information Request Form

Name:
Category that best fits the type of business or agency you are affiliated with:	Government Newspaper / Media Business Public Policy Individual / Student Educators
Company Name:
Email:
Phone:
State:

I'd like to have a copy of this article mailed to me.

To also receive a free sample of other Targeted News products check the appropriate boxes below.
Golf Handicap site (FairwayFiles.com)
Products marked with ** can be customized by keywords or areas of interest. If you select them please specify your keywords in the box below:

If we need to contact you please specify your preferred contact method. Have a representative contact me by phone
Have a representative contact me via email

Additonal questions or comments:

Click here for more information or a free trial

Existing Customer Login

Enhancement-Mode GaN HFET Including ScAIN and Method of Manufacturing the Same

Information Request Form

Copyright Targeted News Service 2026