Wednesday - September 2, 2026

High Electron Mobility Transistor Device Having an Aluminum-Doped Buffer Layer

2026-06-30

ALEXANDRIA, Virginia, June 30 -- QORVO US, INC., Greensboro, North Carolina has been assigned a patent (No. US 12672301 B2, initially filed July 3, 2024) developed by three inventors Jose Jimenez, Dallas, Texas; Jinqiao Xie, Allen, Texas; and Vipan Kumar, Plano, Texas, for "High electron mobility transistor device having an aluminum-doped buffer layer." . . .

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High Electron Mobility Transistor Device Having an Aluminum-Doped Buffer Layer

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