Group III-nitride Transistors With Back Barrier Structures and Buried P-Type Layers and Methods Thereof
Copyright © Targeted News Service 2026
2026-02-17
ALEXANDRIA, Virginia, Feb. 17 -- WOLFSPEED, INC., Durham, North Carolina has been assigned a patent (No. US 12557322 B2, initially filed May 17, 2021) developed by three inventors Christer Hallin, Hillsborough, North Carolina; Saptharishi Sriram, Cary, North Carolina; and Jia Guo, Apex, North Carolina, for "Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof." . . .
