Monday - February 23, 2026

Semiconductor Device With Selectively Grown Field Oxide Layer in Edge Termination Region

2026-01-20

ALEXANDRIA, Virginia, Jan. 20 -- WOLFSPEED, INC., Durham, North Carolina has been assigned a patent (No. US 12532488 B2, initially filed June 24, 2022) developed by three inventors In-Hwan Ji, Cary, North Carolina; Edward Robert Van Brunt, Raleigh, North Carolina; and Woongsun Kim, Cary, North Carolina, for "Semiconductor device with selectively grown field oxide layer in edge termination region." . . .

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Semiconductor Device With Selectively Grown Field Oxide Layer in Edge Termination Region

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