Aluminum nitride transistor advances next-gen RF electronics
December 04, 2025
December 04, 2025
ITHACA, New York, Dec. 4 -- Cornell University posted the following news:
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Aluminum nitride transistor advances next-gen RF electronics
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Cornell researchers have developed a new transistor architecture that could reshape how high-power wireless electronics are engineered, while also addressing supply chain vulnerabilities for a critical semiconductor material.
The device, called an XHEMT, includes an ultra-thin layer of gall . . .
* * *
Aluminum nitride transistor advances next-gen RF electronics
*
Cornell researchers have developed a new transistor architecture that could reshape how high-power wireless electronics are engineered, while also addressing supply chain vulnerabilities for a critical semiconductor material.
The device, called an XHEMT, includes an ultra-thin layer of gall . . .