University of Arkansas: Could Atoms Be Reordered to Enhance Electronic Devices?
November 19, 2025
November 19, 2025
FAYETTEVILLE, Arkansas, Nov. 19 -- The University of Arkansas issued the following news:
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Could Atoms Be Reordered to Enhance Electronic Devices?
The optical properties of a thin layer of the semiconductor germanium-tin (GeSn) sandwiched between barriers of silicon-germanium-tin (SiGeSn), a structure known as a quantum well, have been studied with a focus on improving lasers and photodetectors. But what would happen to an electrical charge passing thro . . .
* * *
Could Atoms Be Reordered to Enhance Electronic Devices?
The optical properties of a thin layer of the semiconductor germanium-tin (GeSn) sandwiched between barriers of silicon-germanium-tin (SiGeSn), a structure known as a quantum well, have been studied with a focus on improving lasers and photodetectors. But what would happen to an electrical charge passing thro . . .