Battery-like computer memory keeps working above 1000degF
December 09, 2024
December 09, 2024
ANN ARBOR, Michigan, Dec. 9 -- The University of Michigan issued the following news:
The material transports oxygen ions rather than electrons, creating heat-resistant voltages for both digital memory and in-memory computing
The memory devices fabricated using tantalum oxide on this chip can store data for both conventional memory and in-memory computing above 1000degF. credit: Brenda Ahearn, Michigan Engineering
Study: Nonvolatile electrochemical memory at . . .
The material transports oxygen ions rather than electrons, creating heat-resistant voltages for both digital memory and in-memory computing
The memory devices fabricated using tantalum oxide on this chip can store data for both conventional memory and in-memory computing above 1000degF. credit: Brenda Ahearn, Michigan Engineering
Study: Nonvolatile electrochemical memory at . . .