AlN semiconductor electronics to advance with DARPA grant
August 28, 2024
August 28, 2024
ITHACA, New York, Aug. 28 -- Cornell University issued the following news:
Aluminum nitride is a promising next-generation semiconductor material, but its widespread adoption has been limited by technical challenges. Cornell researchers, collaborating with the Florida-based technology company Lit Thinking, are working to overcome some of these key limitations with a grant from the Defense Advanced Research Projects Agency (DARPA).
Aluminum nitride is an ultrawide-bandga . . .
Aluminum nitride is a promising next-generation semiconductor material, but its widespread adoption has been limited by technical challenges. Cornell researchers, collaborating with the Florida-based technology company Lit Thinking, are working to overcome some of these key limitations with a grant from the Defense Advanced Research Projects Agency (DARPA).
Aluminum nitride is an ultrawide-bandga . . .