POSTECH Researchers Maximize the Efficiency of Hafnia-Based Ferroelectric Memory Devices
June 21, 2024
June 21, 2024
NOVELTY, Ohio, June 21 (TNSres) -- ASM International posted the following news from Pohang University of Science and Technology:
Researchers at Pohang University of Science and Technology (POSTECH), South Korea, have significantly enhanced the data storage capacity of ferroelectric memory devices. By using hafnia-based ferroelectric materials and an innovative device structure, their findings, published in the international journal Science Advances, mark a substantial advancement in . . .
Researchers at Pohang University of Science and Technology (POSTECH), South Korea, have significantly enhanced the data storage capacity of ferroelectric memory devices. By using hafnia-based ferroelectric materials and an innovative device structure, their findings, published in the international journal Science Advances, mark a substantial advancement in . . .