Tokyo Institute of Technology: Revolutionizing Memory Technology: Multiferroic Nanodots for Low-Power Magnetic Storage
May 23, 2024
May 23, 2024
TOKYO, Japan, May 23 (TNSres) -- Tokyo Institute of Technology issued the following news release:
Cobalt-substituted BiFeO3 nanodots, engineered by Tokyo Tech researchers, demonstrate magnetoelectric-coupled ferroelectric and ferromagnetic single domain, offering significant promise for the advancement of low-power, nonvolatile magnetic memory devices. This innovation opens avenues for memory technologies where data can be written and read via electric and magnetic fields, respectiv . . .
Cobalt-substituted BiFeO3 nanodots, engineered by Tokyo Tech researchers, demonstrate magnetoelectric-coupled ferroelectric and ferromagnetic single domain, offering significant promise for the advancement of low-power, nonvolatile magnetic memory devices. This innovation opens avenues for memory technologies where data can be written and read via electric and magnetic fields, respectiv . . .