New Candidate for Universal Memory is Fast, Low-Power, Stable and Long-Lasting
February 17, 2024
February 17, 2024
MATERIALS PARK, Ohio, Feb. 17 (TNSres) -- ASM International posted the following news:
Researchers at Stanford University have demonstrated that a new material may make phase-change memory--which relies on switching between high and low resistance states to create the ones and zeroes of computer data--an improved option for future AI and data-centric systems. Their scalable technology, as detailed in Nature Communications, is fast, low-power, stable, long-lasting, and can be fabrica . . .
Researchers at Stanford University have demonstrated that a new material may make phase-change memory--which relies on switching between high and low resistance states to create the ones and zeroes of computer data--an improved option for future AI and data-centric systems. Their scalable technology, as detailed in Nature Communications, is fast, low-power, stable, long-lasting, and can be fabrica . . .