Argonne National Laboratory: Scientists Discover 'Ripple' in Flexible Material That Could Improve Electronic Properties
November 14, 2019
November 14, 2019
ARGONNE, Illinois, Nov. 14 -- The U.S. Department of Energy's Argonne National Laboratory issued the following news release:
A newly discovered phenomenon in a flexible semiconductor could affect its promise for electronic devices.
Two-dimensional materials -- those either only an atom or layer thick -- display a number of interesting properties and could form the foundation for a range of new devices. One of these materials, molybdenum disulfide (MoS2), has shown an un . . .
A newly discovered phenomenon in a flexible semiconductor could affect its promise for electronic devices.
Two-dimensional materials -- those either only an atom or layer thick -- display a number of interesting properties and could form the foundation for a range of new devices. One of these materials, molybdenum disulfide (MoS2), has shown an un . . .