Saturday - December 21, 2024

3D NAND Memory With Built-In Capacitor

2024-12-17

ALEXANDRIA, Virginia, Dec. 17 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12170117 B2, initially filed Aug. 2, 2022) developed by three inventors Yu-Chung Lien, San Jose, California; Ching-Huang Lu, Fremont, California; and Zhenming Zhou, San Jose, California, for "3D NAND memory with built-in capacitor." . . .

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3D NAND Memory With Built-In Capacitor

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