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P Type Gallium Nitride Conformal Epitaxial Structure Over Thick Buffer Layer

2024-12-17

ALEXANDRIA, Virginia, Dec. 17 -- TEXAS INSTRUMENTS INC., Dallas, Texas has been assigned a patent (No. US 12170328 B2, initially filed Dec. 15, 2020) developed by three inventors Tatsuya Tominari, Plano, Texas; Nicholas Stephen Dellas, Dallas, Texas; and Qhalid Fareed, Plano, Texas, for "P type gallium nitride conformal epitaxial structure over thick buffer layer." . . .

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P Type Gallium Nitride Conformal Epitaxial Structure Over Thick Buffer Layer

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