Sunday - December 22, 2024

Manufacturing Method for a Power MOSFET With Gate-Source ESD Diode Structure

2024-12-17

ALEXANDRIA, Virginia, Dec. 17 -- DIODES INC., Plano, Texas has been assigned a patent (No. US 12170311 B1, initially filed July 2, 2024) developed by three inventors Wan-Yu Kai, New Taipei, Taiwan; Chia-Wei Hu, New Taipei, Taiwan; and Ta-Chuan Kuo, New Taipei, Taiwan, for "Manufacturing method for a power MOSFET with gate-source ESD diode structure." . . .

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Manufacturing Method for a Power MOSFET With Gate-Source ESD Diode Structure

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