Sunday - December 22, 2024

Heterojunction Bipolar Transistor With Buried Trap Rich Isolation Region

2024-12-17

ALEXANDRIA, Virginia, Dec. 17 -- GLOBALFOUNDRIES U.S. INC., Malta, New York has been assigned a patent (No. US 12170313 B2, initially filed May 26, 2023) developed by five inventors Vibhor Jain, Williston, Vermont; Anthony K. Stamper, Burlington, Vermont; John J. Ellis-Monaghan, Grand Isle, Vermont; Steven M. Shank, Jericho, Vermont; and Rajendran Krishnasamy, Essex Junction, Vermont, for "Heterojunction bipolar transistor with buried trap rich isolation region." . . .

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Heterojunction Bipolar Transistor With Buried Trap Rich Isolation Region

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