Sunday - December 22, 2024

High Voltage MOSFET Device With Improved Breakdown Voltage

2024-12-17

ALEXANDRIA, Virginia, Dec. 17 -- GLOBALFOUNDRIES U.S. INC., Malta, New York has been assigned a patent (No. US 12170329 B2, initially filed March 11, 2022) developed by three inventors Anupam Dutta, Malta, New York; Vvss Satyasuresh Choppalli, Malta, New York; and Rajendran Krishnasamy, Malta, New York, for "High voltage MOSFET device with improved breakdown voltage." . . .

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High Voltage MOSFET Device With Improved Breakdown Voltage

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