Sunday - December 22, 2024

Field Effect Transistor With Vertical Nanowire in Channel Region and Bottom Spacer Between the Vertical Nanowire and Gate Dielectric Material

2024-12-17

ALEXANDRIA, Virginia, Dec. 17 -- GLOBALFOUNDRIES U.S. INC., Malta, New York has been assigned a patent (No. US 12170315 B2, initially filed Jan. 6, 2022) developed by Ali Razavieh, Saratoga Springs, New York, and Haiting Wang, Clifton Park, New York, for "Field effect transistor with vertical nanowire in channel region and bottom spacer between the vertical nanowire and gate dielectric material." . . .

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Field Effect Transistor With Vertical Nanowire in Channel Region and Bottom Spacer Between the Vertical Nanowire and Gate Dielectric Material

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