Microelectronic Devices With Active Source/Drain Contacts in Trench in Symmetrical Dual-Block Structure, and Related Systems and Methods
Copyright © Targeted News Service 2024
2024-12-10
ALEXANDRIA, Virginia, Dec. 10 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12166094 B2, initially filed July 12, 2021) developed by four inventors Lifang Xu, Boise, Idaho; Richard J. Hill, Boise, Idaho; Indra V. Chary, Boise, Idaho; and Lars P. Heineck, Boise, Idaho, for "Microelectronic devices with active source/drain contacts in trench in symmetrical dual-block structure, and related systems and methods." . . .