Sunday - December 22, 2024

Gate Structure in Semiconductor Device and Method of Forming the Same

2024-12-10

ALEXANDRIA, Virginia, Dec. 10 -- TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, Taiwan has been assigned a patent (No. US 12166074 B2, initially filed Feb. 21, 2022) developed by ten inventors Hsin-Yi Lee, Hsinchu, Taiwan; Weng Chang, Hsinchu, Taiwan; Hsiang-Pi Chang, New Taipei, Taiwan; Huang-Lin Chao, Hillsboro, Oregon; Chung-Liang Cheng, Changhua County, Taiwan; Chi On Chui, Hsinchu, Taiwan; Kun-Yu Lee, Tainan, Taiwan; Tzer-Min Shen, Hsinchu, Taiwan; Yen-Tien Tung, Hsinchu, Taiwan; a . . .

Information Request Form

Name:
Category that best fits the type of business or agency you are affiliated with:	Government Newspaper / Media Business Public Policy Individual / Student Educators
Company Name:
Email:
Phone:
State:

I'd like to have a copy of this article mailed to me.

To also receive a free sample of other Targeted News products check the appropriate boxes below.
Golf Handicap site (FairwayFiles.com)
Products marked with ** can be customized by keywords or areas of interest. If you select them please specify your keywords in the box below:

If we need to contact you please specify your preferred contact method. Have a representative contact me by phone
Have a representative contact me via email

Additonal questions or comments:

Click here for more information or a free trial

Existing Customer Login

Gate Structure in Semiconductor Device and Method of Forming the Same

Information Request Form

Copyright Targeted News Service 2024