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High Electron Mobility Transistors (HEMTS) Including a Yttrium (Y) and Aluminum Nitride (AIN) (YAIN) Alloy Layer

2024-12-10

ALEXANDRIA, Virginia, Dec. 10 -- QORVO US, INC., Greensboro, North Carolina has been assigned a patent (No. US 12166118 B2, initially filed Jan. 7, 2022) developed by three inventors Edward Beam, III, Plano, Texas; Jinqiao Xie, Allen, Texas; and Antonio Lucero, Garland, Texas, for "High electron mobility transistors (HEMTS) including a yttrium (Y) and aluminum nitride (AIN) (YAIN) alloy layer." . . .

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High Electron Mobility Transistors (HEMTS) Including a Yttrium (Y) and Aluminum Nitride (AIN) (YAIN) Alloy Layer

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