Sunday - December 22, 2024

Memory Cell Voltage Level Selection

2024-12-10

ALEXANDRIA, Virginia, Dec. 10 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12165709 B2, initially filed July 28, 2022) developed by five inventors Tingjun Xie, Milpitas, California; Murong Lang, San Jose, California; Fangfang Zhu, Boise, Idaho; Jiangli Zhu, San Jose, California; and Zhenming Zhou, San Jose, California, for "Memory cell voltage level selection." . . .

Information Request Form

Name:
Category that best fits the type of business or agency you are affiliated with:	Government Newspaper / Media Business Public Policy Individual / Student Educators
Company Name:
Email:
Phone:
State:

I'd like to have a copy of this article mailed to me.

To also receive a free sample of other Targeted News products check the appropriate boxes below.
Golf Handicap site (FairwayFiles.com)
Products marked with ** can be customized by keywords or areas of interest. If you select them please specify your keywords in the box below:

If we need to contact you please specify your preferred contact method. Have a representative contact me by phone
Have a representative contact me via email

Additonal questions or comments:

Click here for more information or a free trial

Existing Customer Login

Memory Cell Voltage Level Selection

Information Request Form

Copyright Targeted News Service 2024