Sunday - December 22, 2024

Methods for Etching a Material Layer for Semiconductor Applications

2024-12-10

ALEXANDRIA, Virginia, Dec. 10 -- APPLIED MATERIALS, INC., Santa Clara, California has been assigned a patent (No. US 12165877 B2, initially filed Dec. 23, 2019) developed by six inventors Zhigang Wang, Xi'an, China; Jiao Yang, Xi'an, China; Heng Wang, Shaanxi, China; Alfredo Granados, San Antonio, Texas; Jon C. Farr, Tempe, Arizona; and Ruizhe Ren, Shaanxi, China, for "Methods for etching a material layer for semiconductor applications." . . .

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Methods for Etching a Material Layer for Semiconductor Applications

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