Sunday - December 22, 2024

Gallium Nitride Transistor With a Doped Region

2024-12-10

ALEXANDRIA, Virginia, Dec. 10 -- TEXAS INSTRUMENTS INC., Dallas, Texas has been assigned a patent (No. US 12166119 B2, initially filed July 24, 2023) developed by four inventors Dong Seup Lee, McKinney, Texas; Jungwoo Joh, Allen, Texas; Pinghai Hao, Plano, Texas; and Sameer Pendharkar, Allen, Texas, for "Gallium nitride transistor with a doped region." . . .

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Gallium Nitride Transistor With a Doped Region

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