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Field-Effect Transistor (FET) With Self-Aligned Ferroelectric Capacitor and Methods of Fabrication

2024-12-10

ALEXANDRIA, Virginia, Dec. 10 -- INTEL CORPORATION, Santa Clara, California has been assigned a patent (No. US 12166122 B2, initially filed Dec. 23, 2020) developed by six inventors Shriram Shivaraman, Hillsboro, Oregon; Uygar Avci, Portland, Oregon; Ashish Verma Penumatcha, Beaverton, Oregon; Nazila Haratipour, Portland, Oregon; Seung Hoon Sung, Portland, Oregon; and Sou-Chi Chang, Portland, Oregon, for "Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fab . . .

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Field-Effect Transistor (FET) With Self-Aligned Ferroelectric Capacitor and Methods of Fabrication

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