Sunday - December 22, 2024

Electronic Device Including a Semiconductor Layer Within a Trench and a Semiconductor Layer and a Process of Forming the Same

2024-12-10

ALEXANDRIA, Virginia, Dec. 10 -- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, Arizona has been assigned a patent (No. US 12166068 B2, initially filed Jan. 28, 2022) developed by Ralph N. Wall, Pocatello, Idaho, and Raymond Lappan, Pocatello, Idaho, for "Electronic device including a semiconductor layer within a trench and a semiconductor layer and a process of forming the same." . . .

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Electronic Device Including a Semiconductor Layer Within a Trench and a Semiconductor Layer and a Process of Forming the Same

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