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GaN Vertical-Channel Junction Field-Effect Transistors With Regrown P-GaN by Metal Organic Chemical Vapor Deposition (MOCVD)

2024-12-03

ALEXANDRIA, Virginia, Dec. 3 -- ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY, Scottsdale, Arizona has been assigned a patent (No. US 12159943 B2, initially filed Nov. 4, 2022) developed by five inventors Yuji Zhao, Chandler, Arizona; Chen Yang, Tempe, Arizona; Houqiang Fu, Tempe, Arizona; Xuanqi Huang, Tempe, Arizona; and Kai Fu, Tempe, Arizona, for "GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)." . . .

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GaN Vertical-Channel Junction Field-Effect Transistors With Regrown P-GaN by Metal Organic Chemical Vapor Deposition (MOCVD)

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