Sunday - December 22, 2024

Replacement Gate Formation in Memory

2024-12-03

ALEXANDRIA, Virginia, Dec. 3 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12159919 B2, initially filed May 12, 2023) developed by Thomas M. Graettinger, Boise, Idaho, for "Replacement gate formation in memory." . . .

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Replacement Gate Formation in Memory

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