Sunday - December 22, 2024

Three-Dimensional Memory Device Including an Isolation-Trench Etch Stop Layer and Methods for Forming the Same

2024-12-03

ALEXANDRIA, Virginia, Dec. 3 -- SANDISK TECHNOLOGIES LLC, Addison, Texas has been assigned a patent (No. US 12160989 B2, initially filed April 8, 2022) developed by four inventors Ramy Nashed Bassely Said, San Jose, California; Raghuveer S. Makala, Campbell, California; Jiahui Yuan, Fremont, California; and Senaka Kanakamedala, San Jose, California, for "Three-dimensional memory device including an isolation-trench etch stop layer and methods for forming the same." . . .

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Three-Dimensional Memory Device Including an Isolation-Trench Etch Stop Layer and Methods for Forming the Same

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