Semiconductor Device Having Word Line Embedded in Gate Trench
Copyright © Targeted News Service 2024
2024-11-26
ALEXANDRIA, Virginia, Nov. 26 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12156398 B2, initially filed Dec. 13, 2021) developed by Toshiyasu Fujimoto, Higashihiroshima, Japan, and Yoshihiro Matsumoto, Kobe, Japan, for "Semiconductor device having word line embedded in gate trench." . . .