Semiconductor Device Structure With Metal Gate Stack
Copyright © Targeted News Service 2024
2024-11-26
ALEXANDRIA, Virginia, Nov. 26 -- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, Taiwan has been assigned a patent (No. US 12154969 B2, initially filed Nov. 22, 2021) developed by three inventors Jung-Hao Chang, Taichung, Taiwan; Li-Te Lin, Hsinchu, Taiwan; and Pinyen Lin, Rochester, New York, for "Semiconductor device structure with metal gate stack." . . .