Ohmic Contacts for a High-Electron-Mobility Transistor
Copyright © Targeted News Service 2024
2024-11-26
ALEXANDRIA, Virginia, Nov. 26 -- GLOBALFOUNDRIES U.S. INC., Malta, New York has been assigned a patent (No. US 12154961 B1, initially filed June 13, 2024) developed by Samuel Troughton, Burlington, Vermont, for "Ohmic contacts for a high-electron-mobility transistor." . . .