Monday - December 23, 2024

Metal Gate Patterning for Logic and SRAM in Nanosheet Devices

2024-11-26

ALEXANDRIA, Virginia, Nov. 26 -- INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, New York has been assigned a patent (No. US 12156395 B2, initially filed Dec. 13, 2021) developed by four inventors Choonghyun Lee, Chigasaki, Japan; Takashi Ando, Eastchester, New York; Jingyun Zhang, Albany, New York; and Alexander Reznicek, Troy, New York, for "Metal gate patterning for logic and SRAM in nanosheet devices." . . .

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Metal Gate Patterning for Logic and SRAM in Nanosheet Devices

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