Monday - December 23, 2024

Thin Film Transistors Having a Backside Channel Contact for High Density Memory

2024-11-19

ALEXANDRIA, Virginia, Nov. 19 -- INTEL CORPORATION, Santa Clara, California has been assigned a patent (No. US 12150297 B2, initially filed Dec. 21, 2020) developed by twelve inventors Noriyuki Sato, Hillsboro, Oregon; Sarah Atanasov, Beaverton, Oregon; Abhishek A. Sharma, Hillsboro, Oregon; Bernhard Sell, Portland, Oregon; Chieh-Jen Ku, Hillsboro, Oregon; Arnab Sen Gupta, Hillsboro, Oregon; Matthew V. Metz, Portland, Oregon; Elliot N. Tan, Portland, Oregon; Hui Jae Yoo, Portland, Oregon; Travis . . .

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Thin Film Transistors Having a Backside Channel Contact for High Density Memory

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