Monday - December 23, 2024

Memory Arrays Comprising Vertically-Alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array

2024-11-19

ALEXANDRIA, Virginia, Nov. 19 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12150318 B2, initially filed Aug. 28, 2023) developed by Durai Vishak Nirmal Ramaswamy, Boise, Idaho, for "Memory arrays comprising vertically-alternating tiers of insulative material and memory cells and methods of forming a memory array." . . .

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Memory Arrays Comprising Vertically-Alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array

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