Monday - December 23, 2024

3D NAND Memory With Fast Corrective Read

2024-11-19

ALEXANDRIA, Virginia, Nov. 19 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12148480 B2, initially filed Aug. 19, 2022) developed by three inventors Yu-Chung Lien, San Jose, California; Jun Wan, San Jose, California; and Zhenming Zhou, San Jose, California, for "3D NAND memory with fast corrective read." . . .

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3D NAND Memory With Fast Corrective Read

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