Monday - December 23, 2024

Memory Device Including Mixed Oxide Charge Trapping Materials and Methods for Forming the Same

2024-11-19

ALEXANDRIA, Virginia, Nov. 19 -- SANDISK TECHNOLOGIES LLC, Addison, Texas has been assigned a patent (No. US 12150302 B2, initially filed Feb. 24, 2022) developed by five inventors Ramy Nashed Bassely Said, San Jose, California; Senaka Kanakamedala, San Jose, California; Raghuveer S. Makala, Campbell, California; Peng Zhang, San Jose, California; and Yanli Zhang, San Jose, California, for "Memory device including mixed oxide charge trapping materials and methods for forming the same." . . .

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Memory Device Including Mixed Oxide Charge Trapping Materials and Methods for Forming the Same

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