Monday - December 23, 2024

Wet Etch Process and Method to Control Fin Height and Channel Area in a Fin Field Effect Transistor (FinFET)

2024-11-19

ALEXANDRIA, Virginia, Nov. 19 -- TOKYO ELECTRON LIMITED, Tokyo, Japan has been assigned a patent (No. US 12148624 B2, initially filed Sept. 12, 2022) developed by five inventors Shan Hu, Albany, New York; Eric Chih-Fang Liu, Albany, New York; Henan Zhang, Albany, New York; Sangita Kumari, Albany, New York; and Peter Delia, Albany, New York, for "Wet etch process and method to control fin height and channel area in a fin field effect transistor (FinFET)." . . .

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Wet Etch Process and Method to Control Fin Height and Channel Area in a Fin Field Effect Transistor (FinFET)

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