Monday - December 23, 2024

Methods to Prevent Surface Charge Induced Cd-Dependent Etching of Material Formed Within Features on a Patterned Substrate

2024-11-19

ALEXANDRIA, Virginia, Nov. 19 -- TOKYO ELECTRON LIMITED, Tokyo, Japan has been assigned a patent (No. US 12148625 B2, initially filed Sept. 16, 2022) developed by five inventors Shan Hu, Albany, New York; Henan Zhang, Albany, New York; Sangita Kumari, Albany, New York; Peter Delia, Albany, New York; and Robert Clark, Fremont, California, for "Methods to prevent surface charge induced cd-dependent etching of material formed within features on a patterned substrate." . . .

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Methods to Prevent Surface Charge Induced Cd-Dependent Etching of Material Formed Within Features on a Patterned Substrate

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