Monday - December 23, 2024

Managing Dielectric Stress of a Memory Device Using Controlled Ramping Slopes

2024-11-12

ALEXANDRIA, Virginia, Nov. 12 -- MICRON TECHNOLOGY, INC., Boise, Idaho has been assigned a patent (No. US 12141445 B2, initially filed Oct. 5, 2022) developed by Sheyang Ning, San Jose, California, and Lawrence Miranda, San Jose, California, for "Managing dielectric stress of a memory device using controlled ramping slopes." . . .

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Managing Dielectric Stress of a Memory Device Using Controlled Ramping Slopes

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