Monday - December 23, 2024

Memory Cell Layout for Low Current Field-Induced MRAM

2024-11-12

ALEXANDRIA, Virginia, Nov. 12 -- III HOLDINGS 1, LLC, Wilmington, Delaware has been assigned a patent (No. US 12141515 B2, initially filed June 17, 2022) developed by Krishnakumar Mani, San Jose, California, for "Memory cell layout for low current field-induced MRAM." . . .

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Memory Cell Layout for Low Current Field-Induced MRAM

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