Gallium Nitride High-Electron Mobility Transistors With P-Type Layers and Process for Making the Same
Copyright © Targeted News Service 2024
2024-11-12
ALEXANDRIA, Virginia, Nov. 12 -- WOLFSPEED, INC., Durham, North Carolina has been assigned a patent (No. US 12142674 B2, initially filed July 7, 2022) developed by Saptharishi Sriram, Cary, North Carolina, for "Gallium Nitride high-electron mobility transistors with p-type layers and process for making the same." . . .