Wednesday - December 25, 2024

Gate-All-Around Field-Effect Transistor Having Source Side Lateral End Portion Smaller Than a Thickness of Channel Portion and Drain Side Lateral End Portion

2024-11-05

ALEXANDRIA, Virginia, Nov. 5 -- INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, New York has been assigned a patent (No. US 12136671 B2, initially filed Dec. 31, 2021) developed by five inventors Jingyun Zhang, Albany, New York; Choonghyun Lee, Rensselaer, New York; Takashi Ando, Tuckahoe, New York; Pouya Hashemi, White Plains, New York; and Alexander Reznicek, Troy, New York, for "Gate-all-around field-effect transistor having source side lateral end portion smaller than a thickness of ch . . .

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Gate-All-Around Field-Effect Transistor Having Source Side Lateral End Portion Smaller Than a Thickness of Channel Portion and Drain Side Lateral End Portion

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