Wednesday - December 25, 2024

Layer Structures for Making Direct Metal-To-Metal Bonds at Low Temperatures in Microelectronics and Method for Forming the Same

2024-11-05

ALEXANDRIA, Virginia, Nov. 5 -- ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, California has been assigned a patent (No. US 12136605 B2, initially filed May 14, 2021) developed by six inventors Guilian Gao, San Jose, California; Gaius Gillman Fountain, Jr., Youngsville, North Carolina; Laura Wills Mirkarimi, Sunol, California; Rajesh Katkar, Milpitas, California; Ilyas Mohammed, Santa Clara, California; and Cyprian Emeka Uzoh, San Jose, California, for "Layer structures for making di . . .

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Layer Structures for Making Direct Metal-To-Metal Bonds at Low Temperatures in Microelectronics and Method for Forming the Same

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