Three-Dimensional Memory Device With Vertical Word Line Barrier and Methods for Forming the Same
Copyright © Targeted News Service 2024
2024-11-05
ALEXANDRIA, Virginia, Nov. 5 -- SANDISK TECHNOLOGIES LLC, Addison, Texas has been assigned a patent (No. US 12137565 B2, initially filed June 11, 2021) developed by four inventors Rahul Sharangpani, Fremont, California; Raghuveer S. Makala, Campbell, California; Fei Zhou, San Jose, California; and Adarsh Rajashekhar, Santa Clara, California, for "Three-dimensional memory device with vertical word line barrier and methods for forming the same." . . .