Wednesday - December 25, 2024

Three-Dimensional Memory Device With Word-Line Etch Stop Liners and Method of Making Thereof

2024-11-05

ALEXANDRIA, Virginia, Nov. 5 -- SANDISK TECHNOLOGIES LLC, Addison, Texas has been assigned a patent (No. US 12137554 B2, initially filed Nov. 12, 2021) developed by three inventors Adarsh Rajashekhar, Santa Clara, California; Raghuveer S. Makala, Campbell, California; and Fei Zhou, San Jose, California, for "Three-dimensional memory device with word-line etch stop liners and method of making thereof." . . .

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Three-Dimensional Memory Device With Word-Line Etch Stop Liners and Method of Making Thereof

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